AP60T03GP Advanced Power Electronics Corp., AP60T03GP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP60T03GP

Manufacturer Part Number
AP60T03GP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP60T03GP.pdf (6 pages)

Specifications of AP60T03GP

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
12
Rds(on) / Max(m?) Vgs@4.5v
25
Qg (nc)
11.6
Qgs (nc)
3.9
Qgd (nc)
7
Id(a)
45
Pd(w)
44
Configuration
Single N
Package
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
AP60T03GP
Manufacturer:
VISHAY
Quantity:
278
Company:
H&T Electronics H&T Electronics
Part Number:
AP60T03GP
Quantity:
2 285
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Speed
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T03GP)
are available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
-55 to 175
-55 to 175
Rating
BV
R
I
0.352
D
+20
120
30
45
32
44
DS(ON)
DSS
Value
AP60T03GS/P
3.4
62
TO-263(S)
TO-220(P)
12mΩ
200809253
Units
W/℃
Units
℃/W
℃/W
30V
45A
W
℃
℃
V
V
A
A
A
1

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AP60T03GP Summary of contents

Page 1

... The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03GP) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP60T03GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

T = 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source ...

Page 4

AP60T03GS =20A D V =16V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 =25 C ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 60T03GS YWWSSS θ θ L1 Part Number Package Code meet Rohs requirement for low voltage MOSFET only ...

Page 6

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E E1 φ Part Marking Information & Packing : TO-220 60T03GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.40 4.60 b 0.76 0. 8.60 8.80 c 0.36 0.43 E 9.80 10.10 L4 14.70 15.00 L5 6.20 6.40 D1 5.10 REF. c1 1.25 1.35 b1 1.17 1.32 L 13.25 13.75 e 2.54 REF. ...

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