AP60T03GS Advanced Power Electronics Corp., AP60T03GS Datasheet

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... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP60T03GS/P RoHS-compliant Product BV 30V DSS R 12mΩ DS(ON) I 45A D TO-263(S) TO-220(P) Rating Units 30 +20 ...

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... AP60T03GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... I =20A D =15A V =10V D G ℃ =25 C 1.6 1.2 0.8 0.4 10 -50 T Fig 4. Normalized On-Resistance v.s. Junction Temperature -50 1.5 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP60T03GS/P 10V 8.0V 6.0V 5.0V V =4. Drain-to-Source Voltage (V) 25 100 175 o , Junction Temperature ( 100 175 o , Junction Temperature ( ...

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... AP60T03GS =20A D V =16V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 60T03GS YWWSSS θ θ L1 Part Number Package Code meet Rohs requirement for low voltage MOSFET only ...

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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E E1 φ Part Marking Information & Packing : TO-220 60T03GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.40 4.60 b 0.76 0. 8.60 8.80 c 0.36 0.43 E 9.80 10.10 L4 14.70 15.00 L5 6.20 6.40 D1 5.10 REF. c1 1.25 1.35 b1 1.17 1.32 L 13.25 13.75 e 2.54 REF. ...