AP60U02GH Advanced Power Electronics Corp., AP60U02GH Datasheet - Page 3

• Manufacturer Part Number: AP60U02GH
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP60U02GH

• Vds: 25V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 20
• Qg (nc): 15
• Qgs (nc): 3.5
• Qgd (nc): 9.5
• Id(a): 40
• Pd(w): 25
• Configuration: Single N
• Package: TO-252

150
120
90
60
30
20
18
16
14
12
10
30
20
10
0
8
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
0.2
V
o
DS
VGS , Gate-to-Source Voltage (V)
Reverse Diode
C
V
1
SD
, Drain-to-Source Voltage (V)
4
0.4
T
, Source-to-Drain Voltage (V)
j
=175
2
0.6
o
C
6
T
I
0.8
C
D
3
=25
= 16 A
℃
1
T
8
V
j
4
=25
G
=3.0V
1.2
7.0V
5.0V
4.5V
10V
o
C
1.4
5
10
100
1.8
1.2
0.6
0.0
1.8
1.4
0.6
80
60
40
20
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
C
D
G
=175
=24A
=10V
1
v.s. Junction Temperature
V
Junction Temperature
0
0
o
DS
T
T
C
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
2
50
50
3
100
100
AP60U02GH
4
o
o
150
150
C)
C )
V
5
G
=3.0V
7.0V
5.0V
4.5V
10V
200
200
6
3/4