AP62T02GJ Advanced Power Electronics Corp., AP62T02GJ Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP62T02GJ

Manufacturer Part Number
AP62T02GJ
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP62T02GJ.pdf (4 pages)

Specifications of AP62T02GJ

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
12
Rds(on) / Max(m?) Vgs@4.5v
16
Qg (nc)
12
Qgs (nc)
2.6
Qgd (nc)
8
Id(a)
48
Pd(w)
36.8
Configuration
Single N
Package
TO-251
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP62T02GJ) are available for low-profile applications.
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
± 20
36.8
120
0.3
30
48
30
29
24
DS(ON)
G
DSS
D
Value
AP62T02GH/J
110
S
3
G D
S
TO-252(H)
TO-251(J)
200504062-1/4
12mΩ
Units
W/℃
Units
℃/W
℃/W
30V
48A
mJ
W
℃
℃
V
V
A
A
A
A

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AP62T02GJ Summary of contents

Page 1

... The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP62T02GJ) are available for low-profile applications. Absolute Maximum Ratings Symbol V Drain-Source Voltage ...

Page 2

AP62T02GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage ...

Page 3

T = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage ...

Page 4

AP62T02GH Total Gate Charge (nC) G Fig7. Gate Charge ...

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