AP6618GM-HF Advanced Power Electronics Corp., AP6618GM-HF Datasheet
AP6618GM-HF
Specifications of AP6618GM-HF
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AP6618GM-HF Summary of contents
Page 1
... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP6618GM-HF Halogen-Free Product BV 30V DSS R 30mΩ DS(ON Rating Units 30 ...
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... AP6618GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 2 ℃ =10V G 1.4 0.8 0 -50 T Fig 4. Normalized On-Resistance 2 1.2 0.8 0.4 1.2 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP6618GM- =150 C A 10V 8.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( 100 ...
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... AP6618GM- =7. =16V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this 10 area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...