AP6680BGM-HF Advanced Power Electronics Corp., AP6680BGM-HF Datasheet
AP6680BGM-HF
Specifications of AP6680BGM-HF
Related parts for AP6680BGM-HF
AP6680BGM-HF Summary of contents
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... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP6680BGM-HF Halogen-Free Product BV 30V DSS R 9mΩ DS(ON) I 13. Rating Units 30 V +20 V 13.3 A 10.6 A ...
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... AP6680BGM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 1 =10V G 1.4 0.9 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 = 1.2 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP6680BGM- 150 7.0 V 6 =4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o ...
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... AP6680BGM- =12A Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...