AP6680GM Advanced Power Electronics Corp., AP6680GM Datasheet
AP6680GM
Specifications of AP6680GM
Related parts for AP6680GM
AP6680GM Summary of contents
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... J Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP6680GM Pb Free Plating Product BV 30V DSS R 11mΩ DS(ON) I 11. Rating Units 30 ± 25 11.5 9.5 50 2.5 0.02 W/℃ ...
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... AP6680GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... V =3. Fig 2. Typical Output Characteristics 2 I =11.5A D =25 ℃ ℃ ℃ ℃ 1.4 0.8 0 -50 Fig 4. Normalized On-Resistance AP6680GM o T =150 Drain-to-Source Voltage ( =11. =10V 100 Junction Temperature ( C) j v.s. Junction Temperature 10V 8 ...
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... AP6680GM Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0.01 0 (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 o C) 100us 1ms 10ms 100ms 0.01 1s 10s DC 0.001 10 100 Fig 8. Effective Transient Thermal Impedance 3 2 ...
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... Tj=150 C 1 0.1 0 0.4 0.8 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics 2 1.5 1 1.2 1.6 -50 Fig 12. Gate Threshold Voltage v.s. AP6680GM f=1.0MHz Ciss Coss Crss ( 100 Junction Temperature ( Junction Temperature 31 150 ...
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... AP6680GM Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.5 x RATED THE OSCILLOSCOPE 5V 0.5 x RATED d(off) d(on) r Fig 14. Switching Time Waveform ...