AP6800GEO Advanced Power Electronics Corp., AP6800GEO Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP6800GEO

Manufacturer Part Number
AP6800GEO
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6800GEO

Vds
20V
Vgs
±10V
Rds(on) / Max(m?) Vgs@4.5v
20
Rds(on) / Max(m?) Vgs@2.5v
25
Qg (nc)
23.4
Qgs (nc)
2.5
Qgd (nc)
11.1
Id(a)
6
Pd(w)
1
Configuration
Single N
Package
TSSOP-8
▼ ▼ ▼ ▼ Low on-resistance
▼ ▼ ▼ ▼ Capable of 2.5V gate drive
▼ ▼ ▼ ▼ Optimal DC/DC battery application
▼ ▼ ▼ ▼ RoHS compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
3
3
, V
, V
GS
GS
Parameter
Parameter
@ 4.5V
@ 4.5V
1
D2
S2
TSSOP-8
S2
G2
3
D1
S1
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S1
G1
Max.
Pb Free Plating Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
0.008
D
±10
6.0
4.7
20
30
DS(ON)
1
DSS
Value
125
D1
S1
AP6800GEO
G2
200109061-1/4
20mΩ
Units
W/℃
℃/W
20V
Unit
W
D2
6
S2
V
V
A
A
A

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AP6800GEO Summary of contents

Page 1

... J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice TSSOP-8 D1 Parameter 4. 4. Parameter 3 AP6800GEO Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET BV DSS R DS(ON Rating 20 ±10 6.0 4 0.008 ...

Page 2

... AP6800GEO Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1 4.5V G 1.5 1.1 0.7 0.3 - Fig 4. Normalized On-Resistance 1 0.8 0.4 0 0.8 1 -50 T Fig 6. Gate Threshold Voltage v.s. AP6800GEO 4. =150 C A 3.5V 3.0V 2.5V V =2. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j 200109061-1 100 150 o ...

Page 4

... AP6800GEO =10V =12V DS V =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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