AP6900GH-HF Advanced Power Electronics Corp., AP6900GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and cost-effectiveness

AP6900GH-HF

Manufacturer Part Number
AP6900GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6900GH-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6.2
Rds(on) / Max(m?) Vgs@4.5v
12.5
Qg (nc)
10
Qgs (nc)
2.5
Qgd (nc)
5.5
Id(a)
75
Pd(w)
3W
Configuration
Dual N
Package
SDPAK
▼ Simple Drive Requirement
▼ Fast Switching Performance
▼ Two Independent Device
▼ Halogen Free & RoHS Compliant Product
V
V
I
I
I
I
P
T
T
Rthj-c (CH-1)
Rthj-c (CH-2)
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
SDPAK
independent device that is suitable and optimum for DC/DC
power application.
D
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
@T
C
A
A
Symbol
Symbol
A
=25℃
=25℃
=70℃
=25℃
TM
Advanced Power
Electronics Corp.
used APEC innovated package and provides two
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Channel-1
3
+ 20
CH-1
CH-2
30
72
18
14
72
G1
-55 to 150
-55 to 150
Rating
S1
BV
R
I
BV
R
I
3
G1
D
D
DS(ON)
DS(ON)
Channel-2
DSS
DSS
S2
AP6900GH-HF
Value
S1
D1
+ 20
14.1
11.2
2.5
4.0
30
45
60
42
G2
G2
SDPAK
D1 (TAB1)
Preliminary
20090420pre
6.2mΩ
10mΩ
D2 (TAB2)
TM
Units
℃/W
℃/W
℃/W
72A
30V
45A
30V
Unit
W
V
V
A
A
A
A
D2
S2
1

Related parts for AP6900GH-HF

AP6900GH-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-c (CH-1) Maximum Thermal Resistance, Junction-case Rthj-c (CH-2) Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter AP6900GH-HF Preliminary CH-1 BV DSS R DS(ON CH-2 BV DSS R DS(ON ...

Page 2

... AP6900GH-HF CH-1 Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... =12A D V =24V DS V =4. =15V DS I =12A D R =3.3Ω, =1.25Ω = =25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =2.5A Is=10A, GS dI/dt=100A/µs AP6900GH-HF Min. Typ =12A - - = =250uA 1 - =12A - 5.7 - 1 =10V - 3.5 - 505 ...

Page 4

... AP6900GH-HF Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance t t d(off) f AP6900GH-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0. Single Pulse Duty factor = t/T Peak ...

Page 6

... AP6900GH-HF Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance t t d(off) f AP6900GH-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0.02 0. Single Pulse Duty factor = t/T Peak ...

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