AP6900GSM Advanced Power Electronics Corp., AP6900GSM Datasheet
AP6900GSM
Specifications of AP6900GSM
Available stocks
Related parts for AP6900GSM
AP6900GSM Summary of contents
Page 1
... Thermal Resistance Junction-ambient Rthj-a (CH-2) Thermal Resistance Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE S1/D2 S1/D2 S1/ SO-8 D1 Parameter Channel Parameter 3 3 AP6900GSM Pb Free Plating Product CH-1 BV 30V DSS R 30mΩ DS(ON) I 5.7A D CH-2 BV 30V DSS R 22mΩ DS(ON ...
Page 2
... AP6900GSM CH-1 Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
Page 3
... I = =24V DS V =10V =20V =5.7Ω, =20Ω = =25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =2.6A Is=7A dI/dt=100A/µs AP6900GSM Min. Typ. Max. Units 30 - =1mA - 0 =250uA =10V ...
Page 4
... Schottky Specifications@T Symbol Parameter V Forward Voltage Drop F Maximum Reverse Leakage Current I rm Maximum Reverse Leakage Current C Junction Capacitance T o =25 C(unless otherwise specified) j Test Conditions I =1. =30V r V =30V,T =100℃ =10V r AP6900GSM Min. Typ. Max. Units - 0.47 0 0.2 0.004 4/9 ...
Page 5
... AP6900GSM Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...
Page 6
... Fig 8. Typical Capacitance Characteristics 1 1ms 0.1 10ms 100ms 0.01 1s 10s DC 0.001 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP6900GSM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T ...
Page 7
... AP6900GSM Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 C j 0.1 0. Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...
Page 8
... Fig 8. Typical Capacitance Characteristics 1 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP6900GSM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factore=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...
Page 9
... T , Junction Temperature ( j Fig 1. Reverse Current vs Junction Temperature 1000 100 Drain-to-Source Voltage (V) DS Fig 3. Typical Junction Capacitance 100 125 Fig 2. Typical Forward Characteristics f=1.0MHz AP6900GSM o o =150 0.3 0.6 0.9 1 Forward Voltage Drop (V) F 1.5 9/9 ...