AP6901GH-HF Advanced Power Electronics Corp., AP6901GH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP6901GH-HF

Manufacturer Part Number
AP6901GH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6901GH-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6.5
Rds(on) / Max(m?) Vgs@4.5v
12
Qg (nc)
10
Qgs (nc)
2.5
Qgd (nc)
5.5
Id(a)
70
Pd(w)
3
Configuration
Dual N
Package
SDPAK
▼ Simple Drive Requirement
▼ Fast Switching Performance
▼ Two Independent Device
▼ Halogen Free & RoHS Compliant Product
V
V
I
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and cost-
effectiveness.
SDPAK
independent device that is suitable and optimum for DC/DC
power application.
D
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
@T
C
A
A
Symbol
Symbol
A
=25℃
=25℃
=70℃
=25℃
TM
Advanced Power
Electronics Corp.
used APEC innovated package and provides two
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
3
G1
Halogen-Free Product
S1
-55 to 150
-55 to 150
Rating
BV
R
I
G1
D
+20
30
70
17
13
70
DS(ON)
3
DSS
S2
AP6901GH-HF
Value
S1
D1
2.5
42
G2
G2
SDPAK
D1 (TAB1)
6.5mΩ
201106271
D2 (TAB2)
TM
Units
℃/W
℃/W
70A
30V
Unit
W
V
V
A
A
A
A
D2
S2
1

Related parts for AP6901GH-HF

AP6901GH-HF Summary of contents

Page 1

... J Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP6901GH-HF Halogen-Free Product BV 30V DSS R 6.5mΩ DS(ON) I 70A D D1 (TAB1) D2 (TAB2 ...

Page 2

... AP6901GH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP6901GH- 150 C A 10V 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 ...

Page 4

... AP6901GH- =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Related keywords