AP6901GSM-HF Advanced Power Electronics Corp., AP6901GSM-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness

AP6901GSM-HF

Manufacturer Part Number
AP6901GSM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6901GSM-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
16.5
Rds(on) / Max(m?) Vgs@4.5v
24
Qg (nc)
3.7
Qgs (nc)
1.5
Qgd (nc)
1.5
Id(a)
7.1
Pd(w)
1.4
Configuration
Dual N
Package
SO-8
▼ Simple Drive Requirement
▼ DC-DC Converter Suitable
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a (CH-1)
Rthj-a (CH-2)
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Thermal Resistance Junction-ambient
Thermal Resistance Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
SO-8
G1
3
3
S1/D2
S1/D2
S1/D2
3
3
D1
D1
G2
DUAL N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
S2/A
Channel-1
Typ.
+20
CH-1
CH-2
7.1
5.7
1.4
30
30
70
42
N-Channel 1
N-Channel 2
Halogen-Free Product
MOSFET
MOSFET
-55 to 150
-55 to 150
G1
G2
Rating
Value
BV
R
I
BV
R
I
D
D
AP6901GSM-HF
DS(ON)
DS(ON)
Channel-2
DSS
DSS
S2/A
D1
Max.
+20
9.2
7.4
2.2
30
30
90
55
Schottky Diode
16.5mΩ
16mΩ
200911131
7.1A
9.2A
Units
Units
℃/W
℃/W
30V
S1/D2
30V
W
V
V
A
A
A
1

Related parts for AP6901GSM-HF

AP6901GSM-HF Summary of contents

Page 1

... Rthj-a (CH-1) Thermal Resistance Junction-ambient Rthj-a (CH-2) Thermal Resistance Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE S1/D2 S1/D2 S1/ SO-8 Parameter Channel Parameter 3 3 AP6901GSM-HF Halogen-Free Product CH-1 BV 30V DSS R 16.5mΩ DS(ON) I 7.1A D CH-2 BV 30V DSS R 16mΩ DS(ON ...

Page 2

... AP6901GSM-HF CH-1 Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... DS V =+20V = =15V DS V =4. =15V =3.3Ω, =15Ω = =25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =1.8A Is=7A dI/dt=100A/µs AP6901GSM-HF Min. Typ = = =250uA = = 3.7 - 1.5 - 1 =10V - 14 375 - 120 - ...

Page 4

... Schottky Specifications@T Symbol Parameter V Forward Voltage Drop F I Maximum Reverse Leakage Current rm Maximum Reverse Leakage Current o =25 C(unless otherwise specified) j Test Conditions I =1. =24V r V =24V,T =75℃ AP6901GSM-HF Min. Typ. Max. Units - 0.47 0 0.2 mA 0.004 ...

Page 5

... AP6901GSM-HF Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 6

... Single Pulse 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance V 4. d(off) f Fig 12. Gate Charge Waveform AP6901GSM-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0 Duty factor = t/T Peak ...

Page 7

... AP6901GSM-HF Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 8

... Single Pulse DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance V 4. d(off) f Fig 12. Gate Charge Waveform AP6901GSM-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factore=0 Duty factor = t/T Peak ...

Page 9

... Schottky 10 1 30V 0.1 24V 0.01 0.001 0.0001 Junction Temperature ( j Fig 1. Reverse Current vs Junction Temperature 10 T =150 j 1 100 125 Fig 2. Typical Forward Characteristics AP6901GSM- = 0.3 0.6 0.9 1.2 1 Forward Voltage Drop ( ...

Related keywords