AP72T03GP Advanced Power Electronics Corp., AP72T03GP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP72T03GP

Manufacturer Part Number
AP72T03GP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP72T03GP

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
9.5
Rds(on) / Max(m?) Vgs@4.5v
17
Qg (nc)
15
Qgs (nc)
3
Qgd (nc)
10
Id(a)
65
Pd(w)
70
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
G
.
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
-55 to 175
-55 to 175
D
Rating
BV
R
I
D
+ 20
190
S
30
65
47
70
DS(ON)
DSS
Value
2.1
62
AP72T03GP
TO-220(P)
9.5mΩ
201001072
Units
Units
℃/W
℃/W
30V
65A
W
V
V
A
A
A
1

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AP72T03GP Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP72T03GP RoHS-compliant Product BV 30V DSS R 9.5mΩ DS(ON) I 65A D G TO-220( Rating Units ...

Page 2

... AP72T03GP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1.8 I =30A D V =10V G 1.4 1 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 1 0.6 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP72T03GP 10V o C 7.0V 6. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( ...

Page 4

... AP72T03GP Total Gate Charge (nC) G Fig7. Gate Charge Characteristics 1000 Operation in this area 100 limited by R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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