AP9918GJ Advanced Power Electronics Corp., AP9918GJ Datasheet

AP9918GJ

Manufacturer Part Number
AP9918GJ
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP9918GJ.pdf (6 pages)

Specifications of AP9918GJ

Vds
20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
14
Rds(on) / Max(m?) Vgs@2.5v
28
Qg (nc)
19
Qgs (nc)
1.5
Qgd (nc)
10.5
Id(a)
45
Pd(w)
48
Configuration
Single N
Package
TO-251
▼ ▼ ▼ ▼ Low on-resistance
▼ ▼ ▼ ▼ Capable of 2.5V gate drive
▼ ▼ ▼ ▼ Low drive current
▼ ▼ ▼ ▼ Surface mount package
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=125℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 4.5V
@ 4.5V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.38
G
± 12
140
20
45
20
48
DS(ON)
D
DSS
S
Value
G
110
2.6
AP9918GH/J
D S
TO-252(H)
TO-251(J)
14mΩ
2001027031
Units
W/℃
℃/W
℃/W
20V
45A
Unit
W
℃
℃
V
V
A
A
A

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AP9918GJ Summary of contents

Page 1

Advanced Power Electronics Corp. ▼ ▼ ▼ ▼ Low on-resistance ▼ ▼ ▼ ▼ Capable of 2.5V gate drive ▼ ▼ ▼ ▼ Low drive current ▼ ▼ ▼ ▼ Surface mount package Description The Advanced Power MOSFETs from APEC ...

Page 2

AP9918GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage ...

Page 3

T = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics (V) GS Fig ...

Page 4

AP9918GH Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 1000 100 = Single Pulse (V) DS ...

Page 5

I =18A =10V DS V =15V DS V =20V Total Gate Charge (nC) G Fig 9. Gate Charge Characteristics 100 ...

Page 6

AP9918GH Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit ...

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