AP9920GEO Advanced Power Electronics Corp., AP9920GEO Datasheet

AP9920GEO

Manufacturer Part Number
AP9920GEO
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9920GEO

Vds
30V
Vgs
±10V
Rds(on) / Max(m?) Vgs@4.5v
27
Rds(on) / Max(m?) Vgs@2.5v
36
Qg (nc)
11
Qgs (nc)
1
Qgd (nc)
4
Id(a)
4.9
Pd(w)
1
Configuration
Single N
Package
TSSOP-8
▼ ▼ ▼ ▼ Low on-resistance
▼ ▼ ▼ ▼ Capable of 2.5V gate drive
▼ ▼ ▼ ▼ Optimal DC/DC battery application
▼ ▼ ▼ ▼ RoHS compliant
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
3
3
, V
, V
GS
GS
Parameter
Parameter
@ 4.5V
@ 4.5V
1
D2
S2
TSSOP-8
S2
G2
3
D1
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
S1
S1
G1
Max.
Pb Free Plating Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
0.008
D
±10
4.9
3.9
30
20
DS(ON)
1
DSS
Value
D1
125
S1
AP9920GEO
G2
201103051-1/4
28mΩ
4.9A
Units
W/℃
℃/W
30V
Unit
W
V
V
A
A
A
D2
S2

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AP9920GEO Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice TSSOP-8 Parameter 4. 4. Parameter 3 AP9920GEO Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET BV DSS R DS(ON Rating 30 ±10 4.9 3 ...

Page 2

... AP9920GEO Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1.1 0.7 0.3 -50 5 Fig 4. Normalized On-Resistance 0.5 0 0.8 -50 Fig 6. Gate Threshold Voltage v.s. AP9920GEO 5 4.5 V 3 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( ...

Page 4

... AP9920GEO =15V =20V DS V =25V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area =25 ...

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