AP9923GEO-HF Advanced Power Electronics Corp., AP9923GEO-HF Datasheet

AP9923GEO-HF

Manufacturer Part Number
AP9923GEO-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9923GEO-HF

Vds
-12V
Vgs
±8V
Rds(on) / Max(m?) Vgs@4.5v
25
Rds(on) / Max(m?) Vgs@2.5v
32
Rds(on) / Max(m?) Vgs@1.8v
40
Qg (nc)
28
Qgs (nc)
3
Qgd (nc)
8
Id(a)
-7
Pd(w)
1
Configuration
Dual P
Package
TSSOP-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9923GEO-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low On-Resistance
▼ Small & Thin Package
▼ Capable of 1.8V Gate Drive
▼ RoHS Compliant & Halogen-Free
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-a
Rthj-L
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Maximum Thermal Resistance, Junction-lead
Parameter
Parameter
1
3
3
D2
S2
TSSOP-8
S2
G2
D1
S1
S1
G1
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
Halogen-Free Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
D
-5.0
0.01
- 12
-7.0
AP9923GEO-HF
-30
+8
DS(ON)
1
DSS
Value
125
D1
S1
75
G2
201009294
25mΩ
-12V
Units
W/℃
℃/W
℃/W
-7A
Unit
W
V
V
A
A
A
D2
S2
1

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AP9923GEO-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient Rthj-L Maximum Thermal Resistance, Junction-lead Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET TSSOP Parameter Parameter 3 AP9923GEO-HF Halogen-Free Product BV -12V DSS R 25mΩ DS(ON Rating Units - 12 V ...

Page 2

... AP9923GEO-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 -7. -4.5V G 1.3 1.0 0.7 0.4 8 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 0.8 0 0.4 0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9923GEO-HF o -5.0V T =150 C A -4.5V -3.5V -2. -1 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 ...

Page 4

... AP9923GEO Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited DS(ON Single Pulse 0.01 0.01 0 (V) DS Fig 9. Maximum Safe Operating Area = =150 ...

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