AP83T02GH-HF Advanced Power Electronics Corp., AP83T02GH-HF Datasheet - Page 2

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters

AP83T02GH-HF

Manufacturer Part Number
AP83T02GH-HF
Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP83T02GH-HF

Vds
25V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Rds(on) / Max(m?) Vgs@4.5v
11
Qg (nc)
24
Qgs (nc)
4
Qgd (nc)
16
Id(a)
75
Pd(w)
2.4
Configuration
Single N
Package
TO-252
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in
AP83T02GH/J-HF
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board
Parameter
Parameter
2
2
2
2
j
=25
o
C(unless otherwise specified)
2
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=15A
=30A
=30A, V
=10A,
=0.5Ω
=3Ω,V
=0V, I
=10V, I
=4.5V, I
=V
=10V, I
=25V, V
=+20V, V
=20V
=4.5V
=15V
=0V
=25V
GS
Test Conditions
Test Conditions
V
, I
GS
D
GS
GS
D
=250uA
D
D
=10V
D
=250uA
GS
=30A
=0V
=40A
=0
=30A
DS
=0V
V
=0V
,
Min.
Min.
25
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1150 1840
Typ.
Typ.
485
365
0.9
55
24
16
10
84
26
18
33
25
4
-
-
-
-
-
-
-
+100
Max. Units
Max. Units
1.2
38
11
10
6
3
-
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
uA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2

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