AP9926GM Advanced Power Electronics Corp., AP9926GM Datasheet
AP9926GM
Specifications of AP9926GM
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AP9926GM Summary of contents
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... Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice RoHS-compliant Product Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter 4. 4. Parameter 3 AP9926GM BV 20V DSS R 30mΩ DS(ON Rating Units 4.8 A ...
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... AP9926GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 1 1.4 1.2 1.0 0.8 0 -50 T Fig 4. Normalized On-Resistance 1.4 1.2 1 0.8 0.6 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP9926GM 150 C 5.0V A 4.5 V 3 Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( C) j v.s. Temperature 0 50 100 150 ...
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... AP9926GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...