Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP92T03GI-HF

Manufacturer Part NumberAP92T03GI-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP92T03GI-HF datasheet
 


Specifications of AP92T03GI-HF

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v4Rds(on) / Max(m?) Vgs@4.5v5.2
Qg (nc)45Qgs (nc)6
Qgd (nc)26Id(a)80
Pd(w)31.3ConfigurationSingle N
PackageTO-220CFM  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (94Kb)Embed
Next
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
.
AP92T03GI-HF
Halogen-Free Product
BV
30V
DSS
R
4mΩ
DS(ON)
I
80A
D
G
D
TO-220CFM(I)
S
Rating
Units
30
V
+20
V
80
A
50
A
300
A
31.3
W
-55 to 150
-55 to 150
Value
Units
4.0
℃/W
65
℃/W
200906251
1

AP92T03GI-HF Summary of contents

  • Page 1

    ... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP92T03GI-HF Halogen-Free Product BV 30V DSS R 4mΩ DS(ON) I 80A TO-220CFM(I) S Rating Units 30 V ...

  • Page 2

    ... AP92T03GI-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 1.8 I =40A D V =10V G 1.4 1 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 6.0 5 4.0 3.0 2.0 1.2 1.4 0 Fig 6. On-Resistance vs. Drain Current AP92T03GI-HF 10V o T =150 C C 7.0V 5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

  • Page 4

    ... AP92T03GI- Total Gate Charge (nC) G Fig7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...