AP92T03GI-HF Advanced Power Electronics Corp., AP92T03GI-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP92T03GI-HF

Manufacturer Part Number
AP92T03GI-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP92T03GI-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4
Rds(on) / Max(m?) Vgs@4.5v
5.2
Qg (nc)
45
Qgs (nc)
6
Qgd (nc)
26
Id(a)
80
Pd(w)
31.3
Configuration
Single N
Package
TO-220CFM
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
.
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
-55 to 150
-55 to 150
G
Rating
BV
R
I
D
31.3
+20
300
30
80
50
D
DS(ON)
DSS
AP92T03GI-HF
S
Value
4.0
65
TO-220CFM(I)
200906251
4mΩ
Units
Units
℃/W
℃/W
30V
80A
W
V
V
A
A
A
1

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AP92T03GI-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP92T03GI-HF Halogen-Free Product BV 30V DSS R 4mΩ DS(ON) I 80A TO-220CFM(I) S Rating Units 30 V ...

Page 2

... AP92T03GI-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1.8 I =40A D V =10V G 1.4 1 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 6.0 5 4.0 3.0 2.0 1.2 1.4 0 Fig 6. On-Resistance vs. Drain Current AP92T03GI-HF 10V o T =150 C C 7.0V 5. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP92T03GI- Total Gate Charge (nC) G Fig7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

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