AP92U03GS-HF Advanced Power Electronics Corp., AP92U03GS-HF Datasheet

The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters

AP92U03GS-HF

Manufacturer Part Number
AP92U03GS-HF
Description
The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP92U03GS-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4.5
Rds(on) / Max(m?) Vgs@4.5v
7.5
Qg (nc)
34
Qgs (nc)
6
Qgd (nc)
20
Id(a)
80
Pd(w)
3.1
Configuration
Single N
Package
TO-263
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
3
GS
GS
@ 10V
@ 10V
G
4
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
+20
320
3.1
30
80
53
50
AP92U03GS-HF
DS(ON)
G D
DSS
Value
2.5
40
S
TO-263(S)
4.5mΩ
201006281
Units
Units
℃/W
℃/W
30V
80A
W
W
V
V
A
A
A
1

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AP92U03GS-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 4 @ 10V GS @ 10V Parameter AP92U03GS-HF Halogen-Free Product BV 30V DSS R 4.5mΩ DS(ON) I 80A D □ TO-263(S) Rating Units 30 ...

Page 2

... AP92U03GS-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP92U03GS- =150 C 10V C 7.0V 6.0V 5.0V V =4.0V G 2.0 3.0 4.0 5.0 6 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...

Page 4

... AP92U03GS- =30A =15V DS V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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