AP9412AGP Advanced Power Electronics Corp., AP9412AGP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9412AGP

Manufacturer Part Number
AP9412AGP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9412AGP

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Rds(on) / Max(m?) Vgs@4.5v
8
Qg (nc)
21
Qgs (nc)
3.6
Qgd (nc)
12
Id(a)
68
Pd(w)
44.6
Configuration
Single N
Package
TO-220
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
44.6
±20
250
S
30
68
43
DS(ON)
DSS
Value
2.8
62
AP9412AGP
TO-220(P)
200805141
6mΩ
Units
Units
℃/W
℃/W
30V
68A
W
V
V
A
A
A
1

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AP9412AGP Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9412AGP RoHS-compliant Product BV 30V DSS R 6mΩ DS(ON) I 68A D G TO-220( Rating Units 30 ± ...

Page 2

... AP9412AGP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9412AGP o 10V 7.0V 6. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP9412AGP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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