AP9412GH Advanced Power Electronics Corp., AP9412GH Datasheet

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... Operating Junction Temperature Range J Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter AP9412GH/J RoHS-compliant Product BV 30V DSS R 6mΩ DS(ON) I 73A □ S TO-252(H) G ...

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... AP9412GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge ...

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... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.8 0.4 0.0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9412GH/J 10V 7 . =175 C C 5.0V 4 =3.0V G 2.0 4.0 6 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 ...

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... AP9412GH =40A =16V DS V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 120 V =5V DS 100 ...