AP9435GG-HF Advanced Power Electronics Corp., AP9435GG-HF Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and cost-effectiveness

AP9435GG-HF

Manufacturer Part Number
AP9435GG-HF
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9435GG-HF

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
50
Rds(on) / Max(m?) Vgs@4.5v
90
Qg (nc)
8
Qgs (nc)
1.5
Qgd (nc)
4
Id(a)
-4.2
Pd(w)
1.25
Configuration
Single P
Package
SOT-89

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9435GG-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low Gate Charge
▼ Fast Switching Characteristic
▼ Single Drive Requirement
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
3
3
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
- 4.2
1.25
0.01
- 30
-3.4
+20
-20
SOT-89
DS(ON)
DSS
AP9435GG-HF
Value
100
D
G
D
50mΩ
201010053
- 4.2A
-30V
Units
W/℃
℃/W
Unit
W
V
V
A
A
A
S
1

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AP9435GG-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V 10V GS 1 Parameter 3 AP9435GG-HF Halogen-Free Product BV -30V DSS R 50mΩ DS(ON 4. SOT-89 G Rating Units - ...

Page 2

... AP9435GG-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =-10V G 1.4 1.0 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.4 1.2 C 1.0 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9435GG-HF -10V o T =150 C -7.0V A -5.0V -4.5V V =-3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 ...

Page 4

... AP9435GG- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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