AP9435GH Advanced Power Electronics Corp., AP9435GH Datasheet

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... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter AP9435GH/J RoHS-compliant Product BV -30V DSS R 50mΩ DS(ON 20A TO-252(H) ...

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... AP9435GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

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... I = -10A D V =-10V 1.6 G 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 1.8 1.6 o =25 C 1.4 1.2 1 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9435GH -10V -8.0V -6.0V -4.5V V =-4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...

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... AP9435GH =-10A D V =-24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...