AP9435GP Advanced Power Electronics Corp., AP9435GP Datasheet
AP9435GP
Manufacturer Part Number
AP9435GP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
... J Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter AP9435GP RoHS-compliant Product BV -30V DSS R 50mΩ DS(ON 15A D G TO-220( Rating Units ...
... AP9435GP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
... Fig 2. Typical Output Characteristics 2.0 I =-10A D V =-10V 1.8 G 1.6 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature = 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9435GP o C -10V -8.0V -6.0V -4.5V V =-4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o T ...
... AP9435GP 14 I =-10A =-24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...