AP86T02GH-HF Advanced Power Electronics Corp., AP86T02GH-HF Datasheet

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AP86T02GH-HF

Manufacturer Part Number
AP86T02GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP86T02GH-HF

Vds
25V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Rds(on) / Max(m?) Vgs@4.5v
10
Qg (nc)
23
Qgs (nc)
5
Qgd (nc)
14
Id(a)
75
Pd(w)
75
Configuration
Single N
Package
TO-252
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP86T02GJ) is
available for low-profile applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
-55 to 175
-55 to 175
AP86T02GH/J-HF
Rating
BV
R
I
D
+20
300
0.5
25
75
62
75
DS(ON)
G
DSS
D
Value
S
110
2
G
D S
TO-251(J)
TO-252(H)
200808159
6mΩ
Units
W/℃
Units
℃/W
℃/W
25V
75A
W
V
V
A
A
A
1

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AP86T02GH-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V GS 1 Parameter AP86T02GH/J-HF Halogen-Free Product BV 25V DSS R 6mΩ DS(ON) I 75A TO-252( TO-251(J) ...

Page 2

... AP86T02GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS 2 Q Total Gate Charge ...

Page 3

... D D ℃ T =25 V =10V c G 1.4 1.0 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 o 0 0.4 0 1.2 Fig 6. Gate Threshold Voltage v.s. AP86T02GH/J-HF 10V 7. 175 C 5. Drain-to-Source Voltage ( 100 125 150 175 Junction Temperature ( 100 ...

Page 4

... AP86T02GH/J- =30A =10V DS V =15V DS V =20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 120 V = ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 86T02GH YWWSSS 0.127~0.381 C Part LOGO Date Code (YWWSSS) If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product ...

Page 6

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 Part Marking Information & Packing : TO-251 86T02GJ LOGO YWWSSS Part Number Date Code (YWWSSS) Y :Last Digit Of The Year WW :Week SSS :Sequence If last "S" is numerical letter : Rohs product If last " ...

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