AP72T03GP-HF Advanced Power Electronics Corp., AP72T03GP-HF Datasheet

AP72T03GP-HF

Manufacturer Part Number
AP72T03GP-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP72T03GP-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
9.5
Rds(on) / Max(m?) Vgs@4.5v
17
Qg (nc)
15
Qgs (nc)
3
Qgd (nc)
10
Id(a)
65
Pd(w)
70
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
1
.
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
G
-55 to 175
-55 to 175
D
Rating
BV
R
I
D
+ 20
190
S
30
65
47
70
DS(ON)
AP72T03GP-HF
DSS
Value
2.1
62
TO-220(P)
9.5mΩ
201001072
Units
Units
℃/W
℃/W
30V
65A
W
V
V
A
A
A
1

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AP72T03GP-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V AP72T03GP-HF Halogen-Free Product BV 30V DSS R 9.5mΩ DS(ON) I 65A D G TO-220( Rating Units 30 V ...

Page 2

... AP72T03GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1.8 I =30A D V =10V G 1.4 1 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 1 0.6 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP72T03GP-HF 10V o C 7.0V 6. Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( ...

Page 4

... AP72T03GP- Total Gate Charge (nC) G Fig7. Gate Charge Characteristics 1000 Operation in this area 100 limited by R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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