AP2R803GMT-HF Advanced Power Electronics Corp., AP2R803GMT-HF Datasheet
AP2R803GMT-HF
Specifications of AP2R803GMT-HF
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AP2R803GMT-HF Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V 10V 10V Parameter 3 AP2R803GMT-HF Halogen-Free Product BV 30V DSS R 3mΩ DS(ON) I 105A □ ® PMPAK 5x6 ...
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... AP2R803GMT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... I =20A D V =10V G 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 I =1mA 1.6 1.2 0.8 0.4 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2R803GMT-HF 10V o C 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( ...
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... AP2R803GMT- =20A D V =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R 100 DS(ON = Single Pulse 1 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 160 ...