AP9T16AGH-HF

Manufacturer Part NumberAP9T16AGH-HF
ManufacturerAdvanced Power Electronics Corp.
AP9T16AGH-HF datasheets

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Specifications of AP9T16AGH-HF

Vds20VVgs±12V
Rds(on) / Max(m?) Vgs@10v20Rds(on) / Max(m?) Vgs@4.5v30
Qg (nc)16Qgs (nc)2.5
Qgd (nc)6Id(a)19.5
Pd(w)12.5ConfigurationSingle N
PackageTO-252  
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Advanced Power
Electronics Corp.
▼ Lower Gate Charge
▼ Capable of 2.5V Gate Drive
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
Gate-Source Voltage
V
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
P
@T
=25℃
Total Power Dissipation
D
A
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
Parameter
@ 4.5V
GS
@ 4.5V
GS
1
3
Parameter
AP9T16AGH-HF
Halogen-Free Product
BV
20V
D
DSS
R
20mΩ
DS(ON)
I
19.5A
D
S
G
D
S
TO-252(H)
Rating
Units
20
+12
19.5
12.3
80
12.5
2
-55 to 150
-55 to 150
Value
Units
℃/W
10
3
℃/W
62.5
201110071
V
V
A
A
A
W
W
℃
℃
1

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AP9T16AGH-HF Summary of contents

  • Page 1

    ... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 4. 4. Parameter AP9T16AGH-HF Halogen-Free Product BV 20V D DSS R 20mΩ DS(ON) I 19. TO-252(H) Rating ...

  • Page 2

    ... AP9T16AGH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2.0 I =12A D V =4.5V G 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance 1.8 I =250uA D 1 0.6 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9T16AGH-HF 5. 150 C C 4.5V 3.5V 2.5V V =2. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o ...

  • Page 4

    ... AP9T16AGH- =16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 50 V =5V DS ...

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