AP9T16AGH-HF Advanced Power Electronics Corp., AP9T16AGH-HF Datasheet

AP9T16AGH-HF

Manufacturer Part Number
AP9T16AGH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9T16AGH-HF

Vds
20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@10v
20
Rds(on) / Max(m?) Vgs@4.5v
30
Qg (nc)
16
Qgs (nc)
2.5
Qgd (nc)
6
Id(a)
19.5
Pd(w)
12.5
Configuration
Single N
Package
TO-252
▼ Lower Gate Charge
▼ Capable of 2.5V Gate Drive
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
3
GS
GS
@ 4.5V
@ 4.5V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
19.5
12.3
12.5
+12
AP9T16AGH-HF
20
80
DS(ON)
2
G
DSS
Value
D
62.5
10
S
TO-252(H)
201110071
20mΩ
19.5A
Units
Units
℃/W
℃/W
20V
W
W
V
V
A
A
A
1

Related parts for AP9T16AGH-HF

AP9T16AGH-HF Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 4. 4. Parameter AP9T16AGH-HF Halogen-Free Product BV 20V D DSS R 20mΩ DS(ON) I 19. TO-252(H) Rating ...

Page 2

... AP9T16AGH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =12A D V =4.5V G 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance 1.8 I =250uA D 1 0.6 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9T16AGH-HF 5. 150 C C 4.5V 3.5V 2.5V V =2. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o ...

Page 4

... AP9T16AGH- =16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 50 V =5V DS ...

Related keywords