AP9410AGH-HF Advanced Power Electronics Corp., AP9410AGH-HF Datasheet

AP9410AGH-HF

Manufacturer Part Number
AP9410AGH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9410AGH-HF

Vds
30V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
6
Rds(on) / Max(m?) Vgs@2.5v
8
Qg (nc)
32
Qgs (nc)
4
Qgd (nc)
15
Id(a)
67
Pd(w)
44.6
Configuration
single N
Package
TO-252

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Company:
Part Number:
AP9410AGH-HF
Quantity:
2 441
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
3
GS
GS
@ 4.5V
@ 4.5V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
44.6
+12
240
AP9410AGH-HF
30
67
42
DS(ON)
2
DSS
G
Value
62.5
D
2.8
S
TO-252(H)
201203051
6mΩ
Units
Units
℃/W
℃/W
30V
67A
W
W
V
V
A
A
A
1

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AP9410AGH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 4. 4. Parameter AP9410AGH-HF Halogen-Free Product BV 30V DSS R 6mΩ DS(ON) I 67A TO-252(H) Rating Units ...

Page 2

... AP9410AGH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =20A D V =4.5V G 1.6 1.2 0.8 0.4 -50 8 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =1mA D 1 0.8 0.4 0.0 1.2 1.4 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9410AGH-HF 5. =150 C C 4.5V 3.5V 2.5V V =2. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP9410AGH- =20A =15V DS V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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