AP3R604GH Advanced Power Electronics Corp., AP3R604GH Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP3R604GH

Manufacturer Part Number
AP3R604GH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP3R604GH

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
3.7
Rds(on) / Max(m?) Vgs@4.5v
5.6
Qg (nc)
28
Qgs (nc)
5.3
Qgd (nc)
16
Id(a)
75
Pd(w)
104
Configuration
Single N
Package
TO-252
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
I
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
STG
J
DS
GS
D
@T
@T
@T
@T
C
C
C
Symbol
Symbol
C
=25℃
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
4
4
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
+20
125
300
104
40
75
75
DS(ON)
DSS
G
Value
62.5
1.2
D
S
AP3R604GH
TO-252(H)
3.7mΩ
200903191
Units
Units
℃/W
℃/W
40V
75A
W
V
V
A
A
A
A
1

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AP3R604GH Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter AP3R604GH RoHS-compliant Product BV 40V DSS R 3.7mΩ DS(ON) I 75A □ S TO-252(H) Rating ...

Page 2

... AP3R604GH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.2 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP3R604GH C 10V 7.0V 6.0V 5.0V V =4.0V G 1.0 2.0 3.0 4 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o , Junction Temperature ( ...

Page 4

... AP3R604GH 10 I =40A =20V DS V =24V DS V =32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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