AP4430GM-HF Advanced Power Electronics Corp., AP4430GM-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4430GM-HF

Manufacturer Part Number
AP4430GM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4430GM-HF

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4.6
Rds(on) / Max(m?) Vgs@4.5v
6.8
Qg (nc)
22
Qgs (nc)
3.5
Qgd (nc)
12
Id(a)
20
Pd(w)
3.1
Configuration
Single N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4430GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Ultra_Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
D
SO-8
D
D
D
S
S
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
+20
3.1
35
20
17
80
DS(ON)
DSS
AP4430GM-HF
Value
40
D
S
4.6mΩ
200910141
Units
℃/W
35V
20A
Unit
W
V
V
A
A
A
1

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AP4430GM-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP4430GM-HF Halogen-Free Product BV 35V DSS R 4.6mΩ DS(ON) I 20A Rating Units ...

Page 2

... AP4430GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.4 0.9 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 = 1.2 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4430GM- 150 7.0 V 6 =4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o ...

Page 4

... AP4430GM- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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