AP4525GEH Advanced Power Electronics Corp., AP4525GEH Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4525GEH

Manufacturer Part Number
AP4525GEH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4525GEH

Vds
40V
Vgs
±16V
Rds(on) / Max(m?) Vgs@10v
28
Rds(on) / Max(m?) Vgs@4.5v
32
Qg (nc)
9
Qgs (nc)
1.5
Qgd (nc)
4
Id(a)
15
Pd(w)
10.4
Configuration
Complementary N-P
Package
TO-252-4L

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4525GEH
Manufacturer:
AP
Quantity:
20 000
Company:
Part Number:
AP4525GEH
Quantity:
45 000
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
S1
G1
S2
G2
TO-252-4L
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
RoHS-compliant Product
±16
15.0
12.0
40
50
-55 to 150
-55 to 150
G1
Rating
10.4
0.083
R
I
R
I
D
D
D1
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
-12.0
-10.0
±16
110
-40
-50
S1
12
AP4525GEH
G2
28mΩ
200809235
42mΩ
-40V
-12A
Units
W/℃
℃/W
℃/W
40V
15A
Unit
W
V
V
A
A
A
D2
S2
1

Related parts for AP4525GEH

AP4525GEH Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L N-channel 1 Parameter AP4525GEH RoHS-compliant Product N-CH BV 40V DSS R 28mΩ DS(ON) I 15A D P-CH BV -40V DSS R 42mΩ ...

Page 2

... AP4525GEH N-CH Electrical Characteristics@ T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... D V =-20V DS V =-4. =-20V =3Ω, =4Ω = =-20V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-12A =-5A dI/dt=-100A/µs AP4525GEH Min. Typ. -40 =-1mA - -0. =-250uA -0 =-10V - ...

Page 4

... AP4525GEH N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 120 I T 100 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 1s DC 0.01 10 100 0.00001 Fig 10. Effective Transient Thermal Impedance o =150 Fig 12. Gate Charge Waveform AP4525GEH f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0 0.01 Duty factor = t/T Single Pulse Peak T ...

Page 6

... AP4525GEH P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 200 170 140 110 ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 1s DC 0.01 10 100 0.00001 Fig 10. Effective Transient Thermal Impedance o T =150 AP4525GEH f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 t 0.01 Duty factor = t/T Peak Single Pulse ...

Page 8

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L Part Marking Information & Packing : TO-252(4L) 4525GEH YWWSSS Part Number LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 6.40 6.6 B 5.2 5.35 C 9.40 9.80 D 2.40 2.70 1.27 REF 0.50 0.65 E3 3.50 4.00 R 0.80 1.00 G 0.40 0.50 H 2.20 2.30 J 0.45 0.50 K 0.00 0.075 L 0.90 1.20 M 5.40 5.60 1.All Dimensions Are in Millimeters. ...

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