AP4563AGH-HF Advanced Power Electronics Corp., AP4563AGH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness

AP4563AGH-HF

Manufacturer Part Number
AP4563AGH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4563AGH-HF

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
20
Rds(on) / Max(m?) Vgs@4.5v
30
Qg (nc)
13.5
Qgs (nc)
3
Qgd (nc)
8
Id(a)
9.6
Pd(w)
3.13
Configuration
Complementary N-P
Package
TO-252-4L
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
3
3
S1
G1
S2
G2
TO-252-4L
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
N-CH BV
P-CH BV
G1
+20
40
9.6
7.7
40
Halogen-Free Product
-55 to 150
-55 to 150
Rating
3.13
D1
R
I
R
I
D
D
P-channel
AP4563AGH-HF
DS(ON)
DS(ON)
DSS
DSS
S1
Value
+20
-7.3
-5.8
-40
-40
40
6
G2
20mΩ
201003172
36mΩ
-7.3A
-40V
9.6A
Units
℃/W
℃/W
40V
Unit
W
V
V
A
A
A
D2
S2
1

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AP4563AGH-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L N-channel Parameter 3 AP4563AGH-HF Halogen-Free Product N-CH BV 40V DSS R 20mΩ DS(ON) I 9.6A D P-CH BV -40V DSS R 36mΩ DS(ON) I -7.3A ...

Page 2

... AP4563AGH-HF N-CH Electrical Characteristics@ T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... DS V =+20V =- =-32V DS V =-4. =-20V =3.3Ω, =2.86Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-2.6A =-7A dI/dt=-100A/µs AP4563AGH-HF Min. Typ. - =-250uA - 17 8.5 - 17.5 =-10V - 1360 2180 ...

Page 4

... AP4563AGH-HF N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms Single Pulse 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP4563AGH-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Duty factor = t/T Peak T ...

Page 6

... AP4563AGH-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.1 0.3 0.5 0.7 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 1s 0.01 DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4563AGH-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

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