AP4565GM Advanced Power Electronics Corp., AP4565GM Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4565GM

Manufacturer Part Number
AP4565GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4565GM

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
32
Qg (nc)
17
Qgs (nc)
4
Qgd (nc)
10
Id(a)
7.6
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4565GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Low On-resistance
▼ ▼ ▼ ▼ Fast Switching Performance
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
1
D1
D1
D1
D1
SO-8
SO-8
3
3
D2
D2
D2
D2
S1
S1
3
G1
G1
S2
S2
G2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
±20
Pb Free Plating Product
40
7.6
6
30
G1
-55 to 150
-55 to 150
Rating
2.0
0.016
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
62.5
D1
S1
-6.5
-5.2
±20
-40
-30
AP4565GM
G2
25mΩ
33mΩ
-6.5A
7.6A
-40V
Units
W/℃
℃/W
200422041
40V
Unit
W
V
V
A
A
A
D2
S2

Related parts for AP4565GM

AP4565GM Summary of contents

Page 1

... Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO SO-8 S1 N-channel Parameter 3 AP4565GM Pb Free Plating Product N-CH BV 40V DSS R 25mΩ DS(ON) I 7.6A D P-CH BV -40V DSS R 33mΩ DS(ON) I -6. Rating Units P-channel ...

Page 2

... AP4565GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... =- =-32V DS V =-4. =-20V =3.3Ω, =20Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.7A =-6A dI/dt=-100A/µs AP4565GM Min. Typ. Max. Units -40 - =-1mA - -0. =-250uA - ...

Page 4

... AP4565GM N-Channel 140 120 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP4565GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

Page 6

... AP4565GM P-Channel 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4565GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse Duty factor = t/T Peak T ...

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