AP9469GM Advanced Power Electronics Corp., AP9469GM Datasheet

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... J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP9469GM Pb Free Plating Product BV 40V DSS R 50mΩ DS(ON Rating Units 40 ±20 5.5 4.4 20 2.5 0.02 W/℃ ...

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... AP9469GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... V =3. Fig 2. Typical Output Characteristics 1 =25 ℃ A 1.4 0.9 0.4 11 -50 Fig 4. Normalized On-Resistance 1 0.8 0.4 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP9469GM 10V 7.0V 5.0V 4. 150 =3. Drain-to-Source Voltage ( =10V 100 Junction Temperature ( C) j v.s. Junction Temperature ...

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... AP9469GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area =25 ...