AP9562GP-HF Advanced Power Electronics Corp., AP9562GP-HF Datasheet - Page 4

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9562GP-HF

Manufacturer Part Number
AP9562GP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9562GP-HF

Vds
-40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
32
Rds(on) / Max(m?) Vgs@4.5v
50
Qg (nc)
15
Qgs (nc)
3
Qgd (nc)
9
Id(a)
-27
Pd(w)
39
Configuration
Single P
Package
TO-220
AP9562GP-HF
1000
100
0.1
10
10
1
8
6
4
2
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
10%
V
I
90%
V
V
Single Pulse
D
DS
GS
T
= -16A
DS
C
= -32V
=25
-V
Q
DS
o
G
10
t
C
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
1
t
r
20
10
t
d(off)
30
t
f
100ms
100us
10ms
1ms
DC
100
40
Fig 10. Effective Transient Thermal Impedance
2400
2000
1600
1200
0.01
800
400
0.1
0.00001
0
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
0.02
0.01
0.05
V
0.1
Single Pulse
0.2
Duty factor=0.5
G
0.0001
5
Q
-V
GS
DS
9
0.001
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
Q
Q
13
G
GD
0.01
Charge
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
f=1.0MHz
T
x R
1
25
thjc
C
C
+ T
C
Q
oss
C
rss
iss
10
29
4

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