AP9564GM Advanced Power Electronics Corp., AP9564GM Datasheet

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... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP9564GM RoHS-compliant Product BV -40V DSS R 28mΩ DS(ON) I -7. Rating Units -40 +25 -7.3 -5.9 -30 2.5 W 0.02 W/℃ ...

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... AP9564GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ∆BV /∆T DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... Fig 2. Typical Output Characteristics 1 =-10V G 1.5 1.2 0.9 0.6 10 -50 T Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.7 1 0.7 0.2 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9564GM -10V o -7.0V C -5.0V -4. -3 Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( 100 150 o ...

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... AP9564GM - -32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area 10 limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...