AP9565AGH Advanced Power Electronics Corp., AP9565AGH Datasheet

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9565AGH/J RoHS-compliant Product BV -40V DSS R 42mΩ DS(ON) I -18. TO-252( ...

Page 2

... AP9565AGH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1.8 I =-12A D V =-10V G 1.5 1.2 0.9 0.6 10 -50 Fig 4. Normalized On-Resistance 1.4 1 0.8 0.6 0.4 1.4 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9565AGH/J -10V o -7.0V C -5.0V -4. -3 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 ...

Page 4

... AP9565AGH -32V -16A Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...