AP9575GM Advanced Power Electronics Corp., AP9575GM Datasheet - Page 3

• Manufacturer Part Number: AP9575GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9575GM

• Vds: -60V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 90
• Rds(on) / Max(m?) Vgs@4.5v: 120
• Qg (nc): 14
• Qgs (nc): 3.3
• Qgd (nc): 8
• Id(a): -4
• Pd(w): 2.5
• Configuration: Single P
• Package: SO-8

100
50
40
30
20
10
90
80
70
60
10
0
8
6
4
2
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
= 25
0.2
-V
-V
Reverse Diode
-V
2
o
SD
C
DS
4
GS
T
0.4
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
j
, Gate-to-Source Voltage (V)
=150
4
0.6
o
C
6
I
T
0.8
D
A
= - 3 A
6
=25
℃
T
1
j
=25
8
V
8
G
o
= -3.0 V
1.2
C
-5.0V
-4.5V
-7.0V
-10V
1.4
10
10
2.0
1.6
1.2
0.8
0.4
1.4
1.2
0.8
0.6
0.4
40
30
20
10
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
T
D
G
A
= -4 A
=-10V
= 1 5 0
2
v.s. Junction Temperature
Junction Temperature
-V
T
j
DS
T
, Junction Temperature (
o
0
0
j
C
, Drain-to-Source Voltage (V)
4
, Junction Temperature (
6
50
50
8
AP9575GM
10
o
100
100
C)
V
o
C)
G
= -3.0 V
-5.0V
12
-7.0V
-4.5V
-10V
150
150
14
3