AP9575GP-HF Advanced Power Electronics Corp., AP9575GP-HF Datasheet - Page 3

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness

AP9575GP-HF

Manufacturer Part Number
AP9575GP-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9575GP-HF

Vds
-60V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
70
Rds(on) / Max(m?) Vgs@4.5v
90
Qg (nc)
14
Qgs (nc)
3
Qgd (nc)
8
Id(a)
-16
Pd(w)
31.3
Configuration
Single P
Package
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9575GP-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
10.0
8.0
6.0
4.0
2.0
0.0
50
40
30
20
10
90
80
70
60
50
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
0.2
-V
T
Reverse Diode
-V
o
-V
2
C
j
DS
=150
SD
GS
4
0.4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
o
C
4
0.6
6
I
T
D
C
0.8
= -8 A
=25
6
o
C
T
1
j
=25
8
V
8
G
o
1.2
C
=-3.0V
-7.0V
-5.0V
-4.5V
-10V
1.4
10
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
40
30
20
10
0
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I
V
D
T
G
= -10 A
= - 10V
C
= 1 5 0
2
Junction Temperature
-V
v.s. Junction Temperature
T
T
DS
j
j
0
0
o
, Junction Temperature (
, Junction Temperature (
C
4
, Drain-to-Source Voltage (V)
6
AP9575GS/P-HF
50
50
8
10
V
100
100
o
o
C)
G
C)
=-3.0V
-7.0V
-5.0V
-4.5V
-10V
12
14
150
150
3

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