AP6679GS-A

Manufacturer Part NumberAP6679GS-A
ManufacturerAdvanced Power Electronics Corp.
AP6679GS-A datasheet
 


Specifications of AP6679GS-A

Vds-40VVgs±25V
Rds(on) / Max(m?) Vgs@10v13.5Rds(on) / Max(m?) Vgs@4.5v20
Qg (nc)43Qgs (nc)7
Qgd (nc)26Id(a)-65
Pd(w)89ConfigurationSingle P
PackageTO-263  
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Advanced Power
Electronics Corp.
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP6679GP-A)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP6679GS/P-A
RoHS-compliant Product
BV
-40V
DSS
R
13.5mΩ
DS(ON)
I
-65A
D
G D
TO-263(S)
S
G
TO-220(P)
D
S
Rating
Units
-40
+25
-65
-41
-260
89
0.71
W/℃
-55 to 150
-55 to 150
Value
Unit
℃/W
1.4
℃/W
62
201011182
V
V
A
A
A
W
1

AP6679GS-A Summary of contents

  • Page 1

    ... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP6679GS/P-A RoHS-compliant Product BV -40V DSS R 13.5mΩ DS(ON) I -65A TO-263( TO-220( Rating ...

  • Page 2

    ... AP6679GS/P-A Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... I = -28A -20A -10V G ℃ T =25 1.6 C 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance 1.5 1.3 1.1 o =25 C 0.9 0.7 0.5 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP6679GS/P-A -10V o T =150 C -7.0V C -5.0V -4. -3.0V G 2.0 4.0 6.0 8.0 , Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( C) j Junction Temperature 10 ...

  • Page 4

    ... AP6679GS/P -16A -32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - = ...