AP98T06GS-HF Advanced Power Electronics Corp., AP98T06GS-HF Datasheet

AP98T06GS-HF

Manufacturer Part Number
AP98T06GS-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP98T06GS-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
5
Qg (nc)
92
Qgs (nc)
12
Qgd (nc)
45
Id(a)
80
Pd(w)
250
Configuration
Single N
Package
TO-263
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for switching power
applications.
STG
J
DS
GS
D
@T
@T
C
Symbol
Symbol
C
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
GS
G
@ 10V
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
4
-55 to 150
-55 to 150
Rating
BV
R
I
D
+20
320
250
G D
60
80
DS(ON)
AP98T06GS-HF
DSS
Value
0.5
40
S
TO-263(S)
200910281
5mΩ
Units
Units
℃/W
60V
80A
℃/W
W
V
V
A
A
1

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AP98T06GS-HF Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS 1 Parameter AP98T06GS-HF Halogen-Free Product BV 60V DSS R 5mΩ DS(ON) I 80A TO-263(S) S Rating Units ...

Page 2

... AP98T06GS-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 1.6 1 0.8 0.4 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP98T06GS- 8.0 V 7 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...

Page 4

... AP98T06GS- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by R DS(ON) 100 = Single Pulse 1 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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