AP9960GM-HF Advanced Power Electronics Corp., AP9960GM-HF Datasheet
AP9960GM-HF
Specifications of AP9960GM-HF
Available stocks
Related parts for AP9960GM-HF
AP9960GM-HF Summary of contents
Page 1
... J Thermal Data Symbol Rthj-amb Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP9960GM-HF Halogen-Free Product BV 40V DSS R 20mΩ DS(ON Rating Units 7.8 6 0.016 W/℃ ...
Page 2
... AP9960GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
Page 3
... Fig 3. On-Resistance v.s. Gate Voltage 32 10V 6.0V 5.0V 4. =4. Fig 2. Typical Output Characteristics 2 I =7. ℃ 1.4 0.8 0 -50 Fig 4. Normalized On-Resistance AP9960GM-HF 10V o T =150 C A 6.0V 5.0V 4. Drain-to-Source Voltage (V) DS =7.0A =10V 100 Junction Temperature ( C) j v.s. Junction Temperature =4.0V 4 150 3 ...
Page 4
... AP9960GM- Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0.01 0 (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 o C) 1ms 10ms 100ms 0.01 1s 10s DC 0.001 10 100 Fig 8. Effective Transient Thermal Impedance 2 ...
Page 5
... C 1 0.1 0.01 0 0.4 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics 3.5 3 2.5 o Tj= 1.5 1 0.5 0.8 1.2 -50 Fig 12. Gate Threshold Voltage v.s. AP9960GM-HF f=1.0MHz Ciss Coss Crss ( 100 Junction Temperature ( Junction Temperature 31 150 5 ...
Page 6
... AP9960GM- Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.5 x RATED THE OSCILLOSCOPE 4.5V 0.5 x RATED d(on) r Fig 14. Switching Time Waveform ...