AP9962GM-HF Advanced Power Electronics Corp., AP9962GM-HF Datasheet - Page 3

• Manufacturer Part Number: AP9962GM-HF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9962GM-HF

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 40
• Qg (nc): 25.8
• Qgs (nc): 4.4
• Qgd (nc): 9.1
• Id(a): 7
• Pd(w): 2
• Configuration: Dual N
• Package: SO-8

0.01
100
0.1
25
20
15
10
10
35
30
25
20
15
5
0
1
Fig 3. On-Resistance v.s. Gate Voltage
0
Fig 1. Typical Output Characteristics
0
3
Fig 5. Forward Characteristic of
T
j
T
=150
4
A
1
V
=25
DS
o
V
V
Reverse Diode
0.4
C
5
o
GS
, Drain-to-Source Voltage (V)
SD
C
, Gate-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
2
6
0.8
3
7
T
j
8
=25
4
o
C
1.2
9
T
I
D
V
A
= 7 A
4.0V
8.0V
5.0V
=25
10V
G
5
=3.0V
10
o
C
1.6
11
6
1.8
1.6
1.4
1.2
1.0
0.8
0.6
25
20
15
10
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
5
0
Fig 6. Gate Threshold Voltage v.s.
3
2
1
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I
V
D
G
T
=7A
=10V
Junction Temperature
A
=150
v.s. Junction Temperature
1
V
T
DS
Junction Temperature (
0
0
o
j
C
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
50
50
AP9962GM-HF
3
o
100
100
C )
o
4
C)
V
10V
8.0V
5.0V
4.0V
G
=3.0V
150
150
5
3