AP9418GM Advanced Power Electronics Corp., AP9418GM Datasheet - Page 4

• Manufacturer Part Number: AP9418GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9418GM

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 4
• Rds(on) / Max(m?) Vgs@4.5v: 7
• Qg (nc): 59
• Qgs (nc): 10.5
• Qgd (nc): 35
• Id(a): 24
• Pd(w): 3.6
• Configuration: Single N
• Package: SO-8

AP9418GM
0.01
100
0.1
10
12
10
1
8
6
4
2
0
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Single Pulse
10%
90%
T
V
V
A
GS
=25
DS
10
o
V
I
C
D
DS
V
Q
0.1
= 12 A
t
V
DS
G
d(on)
V
, Drain-to-Source Voltage (V)
DS
, Total Gate Charge (nC)
= 15 V
DS
=20V
=28V
t
20
r
1
30
t
d(off)
10
40
t
f
100ms
100us
10ms
1ms
DC
1s
100
50
Fig 10. Effective Transient Thermal Impedance
0.001
2800
2400
2000
1600
1200
0.01
800
400
0.1
0
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
Duty factor=0.5
V
0.02
0.01
0.05
0.2
0.1
Single Pulse
G
0.001
5
Q
V
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
21
10
thia
=125 ℃/W
j
= P
t
f=1.0MHz
DM
T
x R
100
25
thja
Q
C
+ T
C
C
a
oss
iss
rss
1000
29
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