AP9466GM Advanced Power Electronics Corp., AP9466GM Datasheet

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... J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP9466GM RoHS-compliant Product BV 40V DSS R 13.5mΩ DS(ON) I 10A Rating Units 40 ± 8.4 40 2.5 0.02 W/℃ ...

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... AP9466GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

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... Fig 2. Typical Output Characteristics 1 =10V G 1.4 0.9 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9466GM 10V 150 C A 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( ...

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... AP9466GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...

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... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 9466GM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. DETAIL A Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW： ...