AP9467GH-HF Advanced Power Electronics Corp., AP9467GH-HF Datasheet

AP9467GH-HF

Manufacturer Part Number
AP9467GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9467GH-HF

Vds
40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
10
Rds(on) / Max(m?) Vgs@4.5v
18
Qg (nc)
18
Qgs (nc)
3.2
Qgd (nc)
13
Id(a)
52
Pd(w)
44.6
Configuration
Single N
Package
TO-252
▼ Low On-resistance
▼ Single Drive Requirement
▼ Fast Switching Characteristics
▼ RoHS Compliant & Halogen-Free
Data and specifications subject to change without notice
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9467GJ) are
available for low-profile applications.
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
3
-55 to 150
-55 to 150
G
Rating
BV
R
I
D
D
AP9467GH/J-HF
+ 20
44.6
0.36
200
40
52
33
DS(ON)
2
S
G
DSS
Value
D
62.5
110
2.8
S
TO-252(H)
TO-251(J)
201005314
11mΩ
Units
W/℃
℃/W
℃/W
℃/W
40V
52A
Unit
W
W
V
V
A
A
A
1

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AP9467GH-HF Summary of contents

Page 1

... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP9467GH/J-HF Halogen-Free Product BV 40V DSS R 11mΩ DS(ON) I 52A TO-252( ...

Page 2

... AP9467GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.2 I =30A D V =10V G 1.8 1.4 1.0 0 -50 Fig 4. Normalized On-Resistance 1.6 1.4 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP9467GH/J-HF 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP9467GH/J- =30A =32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this 100 area limited by R DS(ON = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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