AP9467GM Advanced Power Electronics Corp., AP9467GM Datasheet - Page 4

• Manufacturer Part Number: AP9467GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9467GM

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 13.5
• Rds(on) / Max(m?) Vgs@4.5v: 21
• Qg (nc): 18.3
• Qgs (nc): 2.9
• Qgd (nc): 11.5
• Id(a): 12
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

AP9467GM
0.01
100
0.1
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Single Pulse
T
V
90%
10%
V
A
DS
V
GS
=25
V
I
DS
D
V
DS
V
= 20 V
4
= 12 A
o
DS
DS
= 24 V
Q
C
0.1
t
= 32 V
G
, Drain-to-Source Voltage (V)
d(on)
, Total Gate Charge (nC)
t
8
r
1
12
t
d(off)
10
16
t
f
100ms
100us
10ms
1ms
DC
1s
100
20
Fig 10. Effective Transient Thermal Impedance
0.001
1600
1200
0.01
800
400
0.1
0
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
V
Duty factor=0.5
0.01
0.02
0.1
0.05
Single Pulse
0.2
G
0.001
5
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
21
thja
10
=125
j
= P
t
o
C/W
f=1.0MHz
DM
T
x R
100
25
thja
C
C
C
+ T
Q
oss
rss
a
iss
1000
29
4